CESD3V3D3 YU

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes CESD3V3D3 Uni-direction ESD Protection Diode DESCRIPTION SOD-323 Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. FEATURES  Uni-directional ESD protection of one line  Fast response time  Reverse stand−off voltage: 3.3V  JESD22-A114-B ESD Rating of class 3B per human  Low reverse clamping voltage  Low leakage current  Excellent package:1.70mm×1.30mm×1.00mm body model  IEC 61000-4-2 Level 4 ESD protection APPLICATIONS  Computers and peripherals  Portable electronics  Audio and video equipment  Other electronics equipments communi-  Cellular handsets and accessories cation systems MARKING YU = Device code The marking bar indicates the cathode Front side www.cj-elec.com 1 C,Mar,2014 CHANGJIANG ELEC.TECH. CESD3V3D3 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol IEC 61000-4-2 ESD Voltage Air Model Contact Model JESD22-A114-B ESD Voltage Per Human Body Model ESD Voltage VESD(1) ±25 kV ±16 ±0.4 (2) 210 W (2) 16 A PPP Peak Pulse Current Unit ±25 Machine Model Peak Pulse Power Limit IPP Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction Temperature Tj 150 ℃ Tstg -55 ~ +150 ℃ Storage Temperature Range (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. ESD standards compliance IEC61000-4-2 Standard JESD22-A114-B Standard Contact Discharge Air Discharge ESD Class Human Body Discharge V Level Test Voltage kV Level Test Voltage kV 0 0～249 1 2 1 2 2 4 2 4 1A 1B 1C 250～499 500～999 1000～1999 3 6 3 8 4 8 4 15 2 3A 3B 2000～3999 4000～7999 8000～15999 ESD pulse waveform according to IEC61000-4-2 www.cj-elec.com 8/20μs pulse waveform according to IEC 61000-4-5 2 C, Mar,2014 CHANGJIANG ELEC.TECH. CESD3V3D3 ELECTRICAL PARAMETER Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage VF Forward Voltage@ IF IF Forward Current V-I characteristics for a uni-directional TVS ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse stand off voltage Reverse leakage current Breakdown voltage Clamping voltage Symbol Test conditions Min Typ Max Unit 3.3 V 10 μA 5.9 V IPP=16A 13 V 0.9 V （1 ） VRWM IR V(BR) （2） VC VRWM=3.3V IT=1mA Forward voltage VF IF=10mA Junction capacitance CJ VR=0V,f=1MHz 5.0 120 pF (1).Other voltages available upon request. (2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 www.cj-elec.com 3 C,Mar,2014 CHANGJIANG ELEC.TECH. CESD3V3D3 TYPICAL CHARACTERISTICS Reverse Characteristics Forward Characteristics 100 100 Pulsed Pulsed (mA) 10 Ta=100℃ 60 Ta=25℃ 40 20 1 0.5 0 0.6 0.7 0.8 FORWARD VOLTAGE VC —— 15 0.9 VF 1.0 0 2 4 6 REVERSE VOLTAGE (V) IPP VR 8 (V) Capacitance Characteristics 160 Ta=25℃ Ta=25℃ tp=8/20us f=1MHz 12 120 JUNCTION CAPACITANCE CJ (pF) CLAMPING VOLTAGE VC(V) REVERSE CURRENT IR T= a 25 ℃ a T FORWARD CURRENT IF =1 00 ℃ (mA) 80 9 6 80 40 3 0 1 4 8 12 16 0 www.cj-elec.com 1 2 REVERSE VOLTAGE REVERSE PEAK PULSE CURRENT IPP(A) 4 3 4 VR 5 (V) C,Mar,2014 CESD3V3D3 CHANGJIANG ELEC.TECH. PACKAGE OUTLINE AND PAD LAYOUT INFORMATION SOD-323 Package Outline Dimensions SOD-323 Suggested Pad Layout www.cj-elec.com 5 C,Mar,2014 CESD3V3D3 CHANGJIANG ELEC.TECH. TAPE AND REEL INFORMATION www.cj-elec.com 6 C,Mar,2014